ds30296 rev. 5 - 2 1 of 6 CTA2P1N www.diodes.com diodes incorporated characteristic symbol value unit power dissipation (note 1) p d 150 mw thermal resistance, junction to ambient (note 1) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings, total device @ t a = 25 c unless otherwise specified a m j l d b c h k g f a80 maximum ratings, q1, mmbt4403 pnp transistor element @ t a = 25 c unless otherwise specified t c u d o r p w e n CTA2P1N complex transistor array characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5.0 v collector current - continuous i c -600 ma maximum ratings, q2, 2n7002 n-channel mosfet element @ t a = 25 c unless otherwise specified characteristic symbol value units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m v dgr 60 v gate-source voltage continuous pulsed v gss 20 40 v drain current (note 1) continuous continuous @ 100c pulsed i d 115 73 800 ma mechanical data case: sot-363, molded plastic terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 3 case material - ul flammability rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a terminal connections: see diagram marking: a80, see page 3 ordering information: see page 3 weight: 0.006 grams (approx.) combines mmbt4403 type transistor with 2n7002 type mosfet small surface mount package npn/p-channel complement available: cta2n1p also available in lead free version sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm b q1 s q2 d q2 e q1 c q1 g q2 q2 q1
ds30296 rev. 5 - 2 2 of 6 CTA2P1N www.diodes.com electrical characteristics, q1, mmbt4403 pnp transistor element @ t a = 25 c unless otherwise specified t c u d o r p w e n electrical characteristics, q2, 2n7002 n-channel mosfet element @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo -40 v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -40 v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -100 a, i c = 0 collector cutoff current i cex -100 na v ce = -35v, v eb(off) = -0.4v base cutoff current i bl -100 na v ce = -35v, v eb(off) = -0.4v on characteristics (note 2) dc current gain h fe 30 60 100 100 20 300 i c = -100a, v ce = -1.0v i c = -1.0ma, v ce = -1.0v i c = -10ma, v ce = -1.0v i c = -150ma, v ce = -2.0v i c = -500ma, v ce = -2.0v collector-emitter saturation voltage v ce(sat) -0.40 -0.75 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be(sat) -0.75 -0.95 -1.30 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma small signal characteristics output capacitance c cb 8.5 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c eb 30 pf v eb = -0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.5 15 k v ce = -10v, i c = -1.0ma, f = 1.0khz voltage feedback ratio h re 0.1 8.0 x 10 -4 small signal current gain h fe 60 500 output admittance h oe 1.0 100 s current gain-bandwidth product f t 200 mhz v ce = -10v, i c = -20ma, f = 100mhz switching characteristics delay time t d 15 ns v cc = -30v, i c = -150ma, v be(off) = -2.0v, i b1 = -15ma rise time t r 20 ns storage time t s 225 ns v cc = -30v, i c = -150ma, i b1 = i b2 = -15ma fall time t f 30 ns characteristic symbol min typ max unit test condition off characteristics (note 2) drain-source breakdown voltage bv dss 60 70 v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss 10 na v gs = 20v, v ds = 0v on characteristics (note 2) gate threshold voltage v gs(th) 1.0 2.0 v v ds = v gs , i d =-250 a static drain-source on-resistance @ t j = 25c @ t j = 125c r ds (on) 3.2 4.4 7.5 13.5 v gs = 5.0v, i d = 0.05a v gs = 10v, i d = 0.5a on-state drain current i d(on) 0.5 1.0 a v gs = 10v, v ds = 7.5v forward transconductance g fs 80 ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss 22 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 11 25 pf reverse transfer capacitance c rss 2.0 5.0 pf switching characteristics turn-on delay time t d(on) 7.0 20 ns v dd = 30v, i d = 0.2a, r l = 150 ,v gen = 10v, r gen = 25 turn-off delay time t d(off) 11 20 ns note: 1. device mounted on fr-4 pcb; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
ds30296 rev. 5 - 2 3 of 6 CTA2P1N www.diodes.com notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: CTA2P1N-7-f. (note 3) device packaging shipping CTA2P1N-7 sot-363 3000/tape & reel ordering information month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key a80 ym marking information t c u d o r p w e n year 2001 2002 2003 2004 2005 2006 2007 2008 2009 code mnp r s t uvw a80 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september
ds30296 rev. 5 - 2 4 of 6 CTA2P1N www.diodes.com t c u d o r p w e n 0.1 1 10 100 v , base emitter v o ltage (v) be(on) i , collector current (ma) c fig. 4 base-emitter voltage vs. collector current t = 25c a t = -50c a v=5v ce t = 150c a 0.2 0.3 0.4 0.5 0.9 0.8 0.7 0.6 1.0 1 10 100 1000 v,c o llect o rt o emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 3 collector emitter saturation voltage vs. collector current t= 25c a t= 50c a t = 150c a 0 0.1 0.2 0.3 0.4 0.5 i c i b = 10 i , base current (ma) b fig. 2 typical collector saturation region v,c o llect o r-emitter v o ltage (v) ce 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 i=1ma c i=10ma c i=30ma c i = 100ma c i = 300ma c 1.0 5.0 20 10 30 -0.1 -10 -1.0 -30 capacitance (pf) reverse voltage (v) fig. 1 typical capacitance cobo cibo mmbt4403 section
ds30296 rev. 5 - 2 5 of 6 CTA2P1N www.diodes.com t c u d o r p w e n 0 50 100 25 50 75 100 125 150 175 200 p,p o wer dissipati o n (mw) d t , ambient temperature (c) a fig. 7 max power dissipation vs ambient temperature (total device) 150 200 0 1 100 1000 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fi g . 6 gain bandwidth product vs. collector current 10 v = 5v ce 1 100 1000 1 10 100 1000 h , dc current gain fe i , collector current (ma) c fi g . 5 dc current gain vs. collector current 10 v = 5v ce t = 25c a t = -50c a t = 150c a mmbt4403 section
ds30296 rev. 5 - 2 6 of 6 CTA2P1N www.diodes.com t c u d o r p w e n 2n7002 section 0 2 1 4 3 00.2 0.4 0.6 0.8 1 v gate source voltage (v) gs, i , drain current (a) d fi g .12 t y pical transfer characteristics ( 2n7002 ) 6 5 8 7 10 9 v = 10v ds t = -55c a t = +25c a t = +125c a t = +75c a 0 v , gate to source voltage (v) gs fi g . 11 on-resistance vs. gate-source volta g e ( 2n7002 ) i = 50ma d i = 500ma d 1 2 3 4 5 6 0 2 4 6 8 1012141618 1.0 1.5 2.0 2.5 3.0 -55 -30 -5 20 45 70 95 120 145 t , junction temperature ( c) j fig. 10 on-resistance vs ju nction temperature (2n7002) v = 10v, gs i = 200ma d 0 1 2 3 4 5 00.2 i , drain current (a) d fi g . 9 on-resistance vs drain current ( 2n7002 ) v=5.0v gs t=25 c j v = 10v gs 6 7 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1 . 0 01 2 3 4 5 i , drain-source current (a) d v , drain-source voltage (v) ds fi g . 8 on-re g ion characteristics ( 2n7002 ) v = 10v gs 9.0v 8.0v 7.0v 6.5v 6.0v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v 2.0/1.0v 5.5v 5.0v
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